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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-251 Plastic-Encapsulate Transistors
C 2611
TRANSISTORNPN (c)
TO 251
FEATURES Power dissipation PCM : 1 W Tamb=25ae(c) Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25 ae unless otherwise specified(c)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(c) 1 DC current gain hFE(c) 2 Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) Test
1. EMITTER 2.COLLECTOR 3.BASE
1
2
3
conditions
MIN 600 400 7
TYP
MAX
UNIT V V V
Ic= 100|I =0 A IE IC= 1 mA , IB=0
IE= 100 |I IC=0 A VCB= 600 V , IE=0 VCE= 400 V , IB=0 VEB= 7 V , VCE= 20 IC=0
100 200 100 10 5 0.5 1.2 40
|I A |I A |I A
V, IC= 20m A
VCE= 10V, IC= 0.25 mA IC= 50mA, IB= 10 m A IC= 50 mA, IB= 10m A VCE= 20 V, I =20mA C
V V
Transition frequency
f
T
8
MHz
f = 1MHz
Fall time Storage time
t
f
IC=50mA, IB1=-IB2=5mA,
0.3 1.5
|I s |I s
tS
VCC=45V
CLASSIFICATION OF h FE(1)
Rank Range 10-15 15-20 20-25 25-30 30-35 35-40
TO-251 PACKAGE OUTLINE DIMENSIONS
D D1 C1
A
B
b1 b L e e1
E
A1
C
Symbol A A1 B b b1 c c1 D D1 E e e1 L
Dimensions In Millimeters Min 2.200 1.020 1.350 0.500 0.700 0.430 0.430 6.350 5.200 5.400 2.300TYP 4.500 7.500 4.700 7.900 Max 2.400 1.270 1.650 0.700 0.900 0.580 0.580 6.650 5.400 5.700 Min
Dimensions In Inches Max 0.094 0.050 0.065 0.028 0.035 0.023 0.023 0.262 0.213 0.224 0.091TYP 0.177 0.295 0.185 0.311 0.087 0.040 0.053 0.020 0.028 0.017 0.017 0.250 0.205 0.213

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